Novel quantum well intermixing in InGaAs-InGaAsP laser structure using argon plasma exposure

T. C.L. Wee*, Boon Ooi, T. K. Ong, Y. L. Lam, Y. C. Chan, G. I. Ng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Abstract

Samples with InGaAs-InGaAsP single quantum well laser structures were exposed to Ar plasma generated by an electron cyclotron resonance system at different process conditions. During the plasma treatment the Ar flow rate and process pressure were fixed at 50 sccm and 30 mTorr, respectively. Differential bandgap shifts of up to 72 meV were obtained between the plasma treated and the control samples.

Original languageEnglish (US)
Number of pages1
StatePublished - Jan 1 2000
Event2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000) - Nice, France
Duration: Sep 10 2000Sep 15 2000

Other

Other2000 Confernce on Lasers and Electro-Optics Europe (CLEO 2000)
CityNice, France
Period09/10/0009/15/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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