Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes

Hongping Zhao, Guangyu Liu, Xiaohang Li, Yik Khoon Ee, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2010
StatePublished - Dec 1 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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