Novel growth and device concepts for high-efficiency InGaN quantum wells light-emitting diodes

Hongping Zhao*, Guangyu Liu, Xiaohang Li, Yik Khoon Ee, HuaTong, Jing Zhang, G. S. Huang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal- quantumefficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - Oct 11 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period05/16/1005/21/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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