Novel functional devices of transition metal dichalcogenide monolayers

Taishi Takenobu, Jiang Pu, Lain-Jong Li, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.

Original languageEnglish (US)
Title of host publicationProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherIEEE Computer Society
Pages283-286
Number of pages4
ISBN (Print)9784863483958
DOIs
StatePublished - Jan 1 2014
Event21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014 - Kyoto, Japan
Duration: Jul 2 2014Jul 4 2014

Publication series

NameProceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
CountryJapan
CityKyoto
Period07/2/1407/4/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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