Novel device concepts for high-efficiency InGaN-based light-emitting diodes

Hongping Zhao*, Guangyu Liu, Yik Khoon Ee, Xiaohang Li, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Novel staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs with improved momentum matrix element lead to improved internal quantum efficiency for green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal quantum efficiency, light extraction efficiency, and efficiency-droop in nitride LEDs are discussed.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices V
DOIs
StatePublished - May 7 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7602
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices V
CountryUnited States
CitySan Francisco, CA
Period01/25/1001/28/10

Keywords

  • III-Nitride
  • InGaN QWs
  • Light emitting diodes
  • Light extraction efficiency
  • MOCVD epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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