Novel concept for thin multi-crystalline silicon solar cell process

Stefaan De Wolf*, H. F.W. Dekkers, G. Agostinelli, J. Szlufcik

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Solar cells on thin (≤150μm) multi-crystalline Si (mc-Si) substrates require diffusion lengths exceeding twice the substrate-thickness combined with an excellent rear-surface passivation in order to reach efficiencies above 16%. Moreover, thin substrates no longer allow the use of screenprinted Al for back-surface-field (BSF) and contact formation, due to excessive warping upon firing. Gettering originating from POCl3 emitter diffusion, is shown to enhance the bulk-quality to fulfill the first requirement. PECVD amorphous-Si (a-Si) layers, on the other hand, provide very low surface recombination rates. As a consequence, a POCl3 diffused front emitter, combined with a heterostructure a-Si / mc-Si rearside is suggested to overcome the several constraints present when shifting to the use of thinner substrates within a low-cost environment.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1316-1319
Number of pages4
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period05/11/0305/18/03

ASJC Scopus subject areas

  • Engineering(all)

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