Nonvolatile resistive switching in spinel ZnMn2 O4 and ilmenite ZnMnO3

Haiyang Peng*, Tao Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

We report that spinel ZnMn2 O4 and ilmenite ZnMnO3 show excellent unipolar resistive switching behaviors, with ON/OFF ratios larger than 104. For both oxides, retention of more than 10 h and good endurance are achieved. Conduction of the OFF state is dominated by the space-charge-limited conduction mechanism, while the Ohmic behavior dictates the ON state, which suggests a filamentary conduction mechanism. Our study introduces two promising materials candidates for nonvolatile resistive random access memory devices, and furthermore it suggests that formation and rupture of conducting filaments are universal in certain ternary oxides even though they may possess distinct crystalline structures.

Original languageEnglish (US)
Article number152106
JournalApplied Physics Letters
Volume95
Issue number15
DOIs
StatePublished - Oct 22 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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