Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

J. T. Leonard, D. A. Cohen, B. P. Yonkee, R. M. Farrell, T. Margalith, S. Lee, S. P. DenBaars, J. S. Speck, S. Nakamura

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Abstract

© 2015 AIP Publishing LLC. We report on our recent progress in improving the performance of nonpolar III-nitride vertical-cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and employing a multi-layer electron-beam evaporated ITO intracavity contact. The use of an ion implanted aperture improves the lateral confinement over SiNx apertures by enabling a planar ITO design, while the multi-layer ITO contact minimizes scattering losses due to its epitaxially smooth morphology. The reported VCSEL has 10 QWs, with a 3nm quantum well width, 1nm barriers, a 5nm electron-blocking layer, and a 6.95- λ total cavity thickness. These advances yield a single longitudinal mode 406nm nonpolar VCSEL with a low threshold current density (∼16kA/cm$^{2}$), a peak output power of ∼12μW, and a 100% polarization ratio. The lasing in the current aperture is observed to be spatially non-uniform, which is likely a result of filamentation caused by non-uniform current spreading, lateral optical confinement, contact resistance, and absorption loss.
Original languageEnglish (US)
Pages (from-to)011102
JournalApplied Physics Letters
Volume107
Issue number1
DOIs
StatePublished - Jul 6 2015
Externally publishedYes

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