Spin-orbit torque(SOT) has been widely used in data writing of spintronic memory devices by current-induced magnetization switching. The typical structure of SOT-induced magnetization switching of ferromagnetic multilayers with perpendicular magnetic anisotropy(PMA) such as Ta/CoFeB/MgO allowed the ferromagnetic and adjacent nonmagnetic layer to be patterned independently. Here, we studied the role of device geometry in the manipulation of magnetization switchingby placing two separated CoFeB magnetic bits at different locations on Ta layer with trapezoid shape. Manipulation of the magnetization states of the magnetic bits was achieved simply by applying different write current. Both memory writing and Boolean logic functions AND/NAND with large logic output ratio have been demonstrated experimentally.