Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser

Hery S. Djie*, Yang Wang, Boon S. Ooi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.

Original languageEnglish (US)
Title of host publication2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Pages270-273
Number of pages4
Volume2006
StatePublished - 2006
Externally publishedYes
Event2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States
Duration: May 7 2006May 11 2006

Other

Other2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
CountryUnited States
CityPrinceton
Period05/7/0605/11/06

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

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