Nitride photocatalyst to generate hydrogen gas from water

Yasuhiro Iwaki*, Masato Ono, Kazuki Yamaguchi, Kazuhide Kusakabe, Katsushi Fujii, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations

Abstract

We propose a new nitride photocatalyst of an n-n+-GaN structure to increase H2 gas generation. This structure consists of a thin lightly-doped n-type layer on a heavily-doped n+-type layer to realize an optimized depletion layer for optical absorption and highly conductive region, respectively. An optimized n-n+-GaN structure could generate much more H2 gas rather than a single n-GaN layer structure by about 1.4 times.

Original languageEnglish (US)
Pages (from-to)2349-2351
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - Dec 1 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

ASJC Scopus subject areas

  • Condensed Matter Physics

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