Nitride-based concentrator solar cells grown on Si substrates

C. Y. Liu, C. C. Lai, J. H. Liao, L. C. Cheng, H. H. Liu, C. C. Chang, G. Y. Lee, J. I. Chyi, L. K. Yeh, Jr-Hau He, T. Y. Chung, L. C. Huang, K. Y. Lai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

InGaN/GaN multiple-quantum-well solar cells were grown on (111) Si substrates. AlN/AlGaN superlattice and self-assembly SixNy masking islands were employed to alleviate the material mismatches between Si and GaN. The devices were characterized under the illumination of AM 1.5 G with different solar concentrations. As the concentration ratios increased from 1-sun to 105-sun, energy conversion efficiency was enhanced by 25%, which was noticeably greater than the enhancement reported on sapphire substrates under similar solar concentrations. The result is attributed to the superior heat sinking of Si substrates.

Original languageEnglish (US)
Pages (from-to)54-58
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume117
DOIs
StatePublished - Jun 17 2013

Keywords

  • Concentrator
  • GaN
  • InGaN
  • Si substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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