New insights on the origin of Resistive switching in HfO2 thin films: The role of local mechanical strength

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In the Resistive Random Access Memory (RRAM) devices, switching between high and low resistive states is controlled by the processes of disruption and restoration of a conductive filament, which could be formed through the dielectric film. In this study, we demonstrate that RS is strongly linked to the mechanical properties of the insulator that should be considered in the design of flexible memories, which are usually subjected to significant mechanical strains.
Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages472-475
Number of pages4
ISBN (Print)9781479999286
DOIs
StatePublished - Aug 25 2015
Externally publishedYes

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