New approach to 193-nm photoresists: Polyspironorbornane polymers

Robert P. Meagley, Linus Y. Park, Jean Frechet

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.

Original languageEnglish (US)
Pages (from-to)83-90
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3333
DOIs
StatePublished - Dec 1 1998
EventAdvances in Resist Technology and Processing XV - Santa Clara, CA, United States
Duration: Feb 23 1998Feb 23 1998

Keywords

  • 193 nm
  • Cage
  • Chemical amplification
  • EUV
  • Etch resistant
  • Lithography
  • Microelectronics
  • Norbornane
  • Photopolymer
  • Photoresist
  • Spiro

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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