Neutral ion-implantation-induced selective quantum-dot intermixing

H. S. Djie*, B. S. Ooi, V. Aimez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

High spatial band-gap tuning has been observed from an InGaAsGaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126 meV has been observed from the P+ -implanted and intermixed sample, while only ∼14 meV has been measured from the Six Ny -capped sample.

Original languageEnglish (US)
Article number261102
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number26
DOIs
StatePublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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