Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas, Marion Frésard, Ulrike Lüders, Raymond Frésard, Cosima B. Schuster, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)29-31
Number of pages3
JournalChemical Physics Letters
Volume515
Issue number1-3
DOIs
StatePublished - Oct 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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