Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

Boon S. Ooi (Inventor), Chao Zhao (Inventor), Tien Khee Ng (Inventor)

Research output: Patent

Abstract

Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.
Original languageEnglish (US)
Patent numberWO 2017068450 A1
StatePublished - Apr 27 2017

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