Nanoscale resistive switching and filamentary conduction in NiO thin films

J. Y. Ye, Y. Q. Li, J. Gao, H. Y. Peng, S. X. Wu, Tao Wu

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

We fabricate regular arrays of nanoelectrodes on NiO thin films via nanosphere lithography and directly probe the nanoscale resistive switching using a conductive atomic force microscope. The unipolar resistive switching is consistent with the conducting filament formation/rupture mechanism, and the switching power is as low as 10-9 W. We find that only about half of devices are switchable, and the Monte Carlo simulation suggests strong correlations between the switching reliability, the electrode size, and the filament dimension and density.

Original languageEnglish (US)
Article number132108
JournalApplied Physics Letters
Volume97
Issue number13
DOIs
StatePublished - Sep 27 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Nanoscale resistive switching and filamentary conduction in NiO thin films'. Together they form a unique fingerprint.

Cite this