Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO 2/Pt structures

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Resistive Switching (RS) phenomenon in Metal-Insulator-Metal (MIM) structures with polycrystalline HfO 2 layers as dielectric has been studied at the nanoscale using Conductive Atomic Force Microscope (CAFM). The CAFM measurements reveal that (i) the conductive filaments (CFs) created at very small areas are the origin of the RS phenomenon observed at device level and (ii) RS conductive filaments are primarily formed at the grain boundaries, which exhibit especially low breakdown voltage. CAFM images obtained on MIM structures at the Low and High Resistive states also show that, although the current in the Low Resistive State is mainly driven by a completely formed single CF, the cell area dependence of the conductivity in the High Resistive State could be explained by considering the presence of multiple partially formed CFs. © 2012 Elsevier Ltd. All rights reserved.
Original languageEnglish (US)
Pages (from-to)2110-2114
Number of pages5
JournalMicroelectronics Reliability
Volume52
Issue number9-10
DOIs
StatePublished - Sep 1 2012
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics

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