TY - JOUR
T1 - Nanoscale Ion-Doped Polymer Transistors
AU - Thiburce, Quentin
AU - Giovannitti, Alexander
AU - McCulloch, Iain
AU - Campbell, Alasdair J.
N1 - KAUST Repository Item: Exported on 2021-02-19
Acknowledgements: This work was supported by the European Commission’s 7th Framework Programme (FP7/2007-2013) under grant agreement no. 607896 (OrgBIO). We also thank J. Cambiasso for helpful discussions on electron-beam lithography and for helping with SEM imaging.
PY - 2019/2/5
Y1 - 2019/2/5
N2 - Organic transistors with submicron dimensions have been shown to deviate from the expected behaviour due to a variety of so-called ‘short-channel’ effects, resulting in nonlinear output characteristics and a lack of current saturation, considerably limiting their use. Here, using an electrochemically-doped polymer in which ions are dynamically injected and removed from the bulk of the semiconductor, we show that devices with nanoscale channel lengths, down to 50 nm, exhibit output curves with well-defined linear and saturation regimes. Additionally, they show very large on-currents on par with their microscale counterparts, large on-to-off ratios of 108, and record-high width-normalised transconductances above 10 S m−1. We believe this work paves the way for the fabrication of high-gain, high-current polymer integrated circuits such as sensor arrays operating at voltages below |1 V| and prepared using simple solution processing methods.
AB - Organic transistors with submicron dimensions have been shown to deviate from the expected behaviour due to a variety of so-called ‘short-channel’ effects, resulting in nonlinear output characteristics and a lack of current saturation, considerably limiting their use. Here, using an electrochemically-doped polymer in which ions are dynamically injected and removed from the bulk of the semiconductor, we show that devices with nanoscale channel lengths, down to 50 nm, exhibit output curves with well-defined linear and saturation regimes. Additionally, they show very large on-currents on par with their microscale counterparts, large on-to-off ratios of 108, and record-high width-normalised transconductances above 10 S m−1. We believe this work paves the way for the fabrication of high-gain, high-current polymer integrated circuits such as sensor arrays operating at voltages below |1 V| and prepared using simple solution processing methods.
UR - http://hdl.handle.net/10754/631022
UR - https://pubs.acs.org/doi/10.1021/acs.nanolett.8b04717
UR - http://www.scopus.com/inward/record.url?scp=85061926209&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.8b04717
DO - 10.1021/acs.nanolett.8b04717
M3 - Article
AN - SCOPUS:85061926209
VL - 19
SP - 1712
EP - 1718
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 3
ER -