Nanoscale homogeneity and degradation process of two dimensional atomically thin hexagonal boron nitride dielectric stacks

Yanfeng Ji, Chengbin Pan, Fei Hui, Yuanyuan Shi, Lanlan Jiang, Na Xiao, Enric Grustan-Gutierrez, Luca Larcher, Mario Lanza

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper we analyze the reliability of atomically thin hexagonal boron nitride (A-BN) dielectric stacks subjected to electrical stresses. The 2D insulating stacks are grown by chemical vapor deposition, meaning that (unlike exfoliated nanosheets) they can cover large areas and are suitable for the fabrication of scalable devices using photolithography tools. By comparing HfO2 and A-BN stacks with similar equivalent oxide thickness we find that the 2D dielectric shows a striking stable conduction when subjected to sequences of ramped voltage stresses, indicating that it is much more stable versus electrical-field-induced defects. These results point A-BN as superb dielectric for electronic devices.
Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages387-391
Number of pages5
ISBN (Print)9781467382588
DOIs
StatePublished - Sep 9 2016
Externally publishedYes

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