Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

Husam N. Alshareef, Jesus Alfonso Caraveo-Frescas, Dong Kyu Cha

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.
Original languageEnglish (US)
Pages (from-to)202108
JournalApplied Physics Letters
Volume97
Issue number20
DOIs
StatePublished - Nov 22 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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