Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

Mrinal Kanti Hota, Mohamed N. Hedhili, Qingxiao Wang, Vasily Melnikov, Omar F. Mohammed, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Fingerprint

Dive into the research topics of 'Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers'. Together they form a unique fingerprint.

Physics & Astronomy