Nanoscale Cross-Point Resistive Switching Memory Comprising p-Type SnO Bilayers

Mrinal Kanti Hota, Mohamed N. Hedhili, Qingxiao Wang, Vasily Melnikov, Omar F. Mohammed, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Reproducible low-voltage bipolar resistive switching is reported in bilayer structures of p-type SnO films. Specifically, a bilayer homojunction comprising SnOx (oxygen-rich) and SnOy (oxygen-deficient) in nanoscale cross-point (300 × 300 nm2) architecture with self-compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 103 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 103 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.
Original languageEnglish (US)
Pages (from-to)1400035
JournalAdvanced Electronic Materials
Volume1
Issue number3
DOIs
StatePublished - Feb 23 2015

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