Nanoscale and device level gate conduction variability of high-k dielectrics-based metal-oxide-semiconductor structures

Albin Bayerl, Mario Lanza, Marc Porti, Montserrat Nafria, Xavier Aymerich, F. Campabadal, Gnther Benstetter

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

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Chemical Compounds

Engineering & Materials Science