Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors

Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Fingerprint

Dive into the research topics of 'Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy