Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells

Kwangjae Lee, Jung-Wook Min, Bekir Turedi, Abdullah Yousef Alsalloum, Jung-Hong Min, Yeong Jae Kim, Young Jin Yoo, Semi Oh, Namchul Cho, Ram Chandra Subedi, Somak Mitra, Sang Eun Yoon, Jong Hyun Kim, Kwangwook Park, Tae-Hoon Chung, Sung Hoon Jung, Jong-Hyeob Baek, Young Min Song, Iman S. Roqan, Tien Khee NgBoon S. Ooi, Osman Bakr

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Abstract

Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.
Original languageEnglish (US)
JournalACS Energy Letters
DOIs
StatePublished - Sep 17 2020

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