Nanometer scale spintronic sensors and memories

Yuankai Zheng, Kebin Li, Guchang Han, Jinjun Qiu, Zaibing Guo, Yihong Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.

Original languageEnglish (US)
Title of host publication2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
EditorsR. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys
Pages752-755
Number of pages4
Volume1
StatePublished - 2004
Externally publishedYes
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period10/18/0410/21/04

ASJC Scopus subject areas

  • Engineering(all)

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