Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Wei Cheng Lien; Dung Sheng Tsai; Shu Hsien Chiu; Debbie G. Senesky; Roya Maboudian; Albert P. Pisano; Jr Hau He

doi:10.1109/TRANSDUCERS.2011.5969795

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Wei Cheng Lien^*, Dung Sheng Tsai, Shu Hsien Chiu, Debbie G. Senesky, Roya Maboudian, Albert P. Pisano, Jr Hau He

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

Original language	English (US)
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	1875-1878
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969795
State	Published - 2011
Externally published	Yes
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: Jun 5 2011 → Jun 9 2011

Other

Other	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country	China
City	Beijing
Period	06/5/11 → 06/9/11

Keywords

antireflection
high-temperature photodetector
Nanocrystalline SiC
ZnO nanorods

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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Lien, W. C., Tsai, D. S., Chiu, S. H., Senesky, D. G., Maboudian, R., Pisano, A. P., & He, J. H. (2011). Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 1875-1878). [5969795] https://doi.org/10.1109/TRANSDUCERS.2011.5969795

@inproceedings{9cfe0663b2304358a2cfc7437b6c574c,

title = "Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications",

abstract = "This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.",

keywords = "antireflection, high-temperature photodetector, Nanocrystalline SiC, ZnO nanorods",

author = "Lien, {Wei Cheng} and Tsai, {Dung Sheng} and Chiu, {Shu Hsien} and Senesky, {Debbie G.} and Roya Maboudian and Pisano, {Albert P.} and He, {Jr Hau}",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969795",

language = "English (US)",

isbn = "9781457701573",

pages = "1875--1878",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Lien, WC, Tsai, DS, Chiu, SH, Senesky, DG, Maboudian, R, Pisano, AP & He, JH 2011, Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969795, pp. 1875-1878, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 06/5/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969795

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. / Lien, Wei Cheng; Tsai, Dung Sheng; Chiu, Shu Hsien; Senesky, Debbie G.; Maboudian, Roya; Pisano, Albert P.; He, Jr Hau.

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 1875-1878 5969795.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

AU - Lien, Wei Cheng

AU - Tsai, Dung Sheng

AU - Chiu, Shu Hsien

AU - Senesky, Debbie G.

AU - Maboudian, Roya

AU - Pisano, Albert P.

AU - He, Jr Hau

PY - 2011

Y1 - 2011

N2 - This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

AB - This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

KW - antireflection

KW - high-temperature photodetector

KW - Nanocrystalline SiC

KW - ZnO nanorods

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U2 - 10.1109/TRANSDUCERS.2011.5969795

DO - 10.1109/TRANSDUCERS.2011.5969795

M3 - Conference contribution

AN - SCOPUS:80052127831

SN - 9781457701573

SP - 1875

EP - 1878

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

ER -

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Abstract

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Keywords

ASJC Scopus subject areas

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