Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Wei Cheng Lien*, Dung Sheng Tsai, Shu Hsien Chiu, Debbie G. Senesky, Roya Maboudian, Albert P. Pisano, Jr Hau He

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

Original languageEnglish (US)
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages1875-1878
Number of pages4
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: Jun 5 2011Jun 9 2011

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period06/5/1106/9/11

Keywords

  • antireflection
  • high-temperature photodetector
  • Nanocrystalline SiC
  • ZnO nanorods

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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