N-ZnO/LaAlO 3 /p-Si heterojunction for visible-blind UV detection

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, Jr-Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO 3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

Original languageEnglish (US)
Pages (from-to)1112-1114
Number of pages3
JournalOptics Letters
Volume37
Issue number6
DOIs
StatePublished - Mar 15 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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