N-type silicon solar cells featuring an electron-selective TiO2 contact

Xinbo Yang, Klaus Weber

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

In this work, the implementation of an electron-selective TiO2 contact into n-type silicon solar cells is presented for the first time. The surface passivation performance of atomic layer deposition (ALD) ultrathin TiO2 on n-type silicon is investigated. Ultrathin TiO2 film is shown to afford good passivation to non-diffused n-type silicon surface. N-type silicon solar cell with an efficiency of up to 19.8% has been achieved with the implementation of an electron-selective TiO2 contact at the rear. The cell efficiency is demonstrated to be mainly limited by the degraded passivation quality of TiO2 film during contact formation annealing at a high temperature. The results show the potential to fabricate high efficiency silicon solar cells with a simple implementation of electron-selective TiO2 contact.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479979448
DOIs
StatePublished - Dec 14 2015
Externally publishedYes
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period06/14/1506/19/15

Keywords

  • heterojunction
  • silicon
  • solar cells
  • titanium oxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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