N -type behavior of ferroelectric-gate carbon nanotube network transistor

Jun Wei Cheah, Yumeng Shi, Hock Guan Ong, Chun Wei Lee, Lain-Jong Li, Junling Wang

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Carbon nanotube field effect transistor has attracted much attention recently and is a promising candidate for next generation nanoelectronics. Here, we report our study on a transistor using single wall carbon nanotube network as the channel and a ferroelectric film as the gate dielectric. The spontaneous polarization of ferroelectric materials offers nonvolatility and controllability of the surface charges. Modulation of > 102 in the channel conductivity has been observed in the network-based transistor. Voltage pulses are used to control the transistor states; no continuous gate bias is needed. Furthermore, n -type behavior of the network channel is observed, which is attributed to a change in the Schottky barrier at the carbon nanotube-metal interface.

Original languageEnglish (US)
Article number082103
JournalApplied Physics Letters
Volume93
Issue number8
DOIs
StatePublished - Sep 15 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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