N- and P-channel transport behavior in thin film transistors based on tricyanovinyl- capped oligothiophenes

Xiuyu Cai, Michael W. Burand, Christopher R. Newman, Demetrio A. Da Silva Filho, Ted M. Pappenfus, Mamoun M. Bader, Jean-Luc Bredas, Kent R. Mann, C. Daniel Frisbie*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

We report the structural and electrical characterization of thin films of organic semiconductor molecules consisting of an oligothiophene core capped with electron-withdrawing tricyanovinyl (TCV) groups. X-ray diffraction and atomic force microscopy of evaporated films of three different TCV-capped oligothiophenes showed that the films were highly crystalline. Electrical transport was measured in thin film transistors employing silver source and drain contacts and channel probes to correct for contact resistance. Three, compounds exhibited n-channel (electron) conduction consistent with cyclic voltametry data that indicated they undergo facile reduction. Maximum electron mobilities were 0.02 cm2/V-s with an on/off current ratio of 10 6. A fourth end-capped molecule, TCV-6T-TCV, which had six thiophene rings, exhibited both p- and n-channel transport. Overall, these results confirm that substitution of oligothiophene cores with electron-withdrawing groups is a useful strategy to achieve electron-transporting materials.

Original languageEnglish (US)
Pages (from-to)14590-14597
Number of pages8
JournalJournal of Physical Chemistry B
Volume110
Issue number30
DOIs
StatePublished - Aug 3 2006

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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