Multiple-wavelength operation of electroabsorption intensity modulator array fabricated using the one-step quantum well intermixing process

S. L. Ng, H. S. Lim, Y. L. Lam, Y. C. Chan, Boon Ooi, V. Aimez, J. Beauvais, J. Beerens

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Multiple-wavelength selective channel electroabsorption intensity modulators have been fabricated on a single InGaAs/InGaAsP chip using a one-step quantum well intermixing process. This technique was demonstrated for tailoring the intensity modulator operating wavelength by incorporating low-energy (360 keV) phosphorus ions implantation induced disordering process with gray-mask lithography technology. A modulation depth of -15 dB has been measured from these devices with a voltage swing of -4.5 V.

Original languageEnglish (US)
Pages (from-to)1958-1960
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number11
DOIs
StatePublished - Sep 9 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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