Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mitani, Mohamed Razman Yahya

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.

Original languageEnglish (US)
Title of host publicationProceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010
DOIs
StatePublished - 2010
Externally publishedYes
Event34th International Electronics Manufacturing Technology Conference, IEMT 2010 - Melaka, Malaysia
Duration: Nov 30 2010Dec 2 2010

Other

Other34th International Electronics Manufacturing Technology Conference, IEMT 2010
CountryMalaysia
CityMelaka
Period11/30/1012/2/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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