Multilevel magnetoresistive random access memory written at curie point

Y. K. Zheng, Y. H. Wu, J. J. Qiu, Zaibing Guo, G. C. Han, K. B. Li, Z. Q. Lu, H. Xie, P. Luo

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The storage density of MRAMs can be increased via either reducing the cell size or increasing the number of bits stored in one cell. A three-level and six-state multilevel MRAM has been proposed. However, it is difficult to write a cell independently in an MRAM array using this structure. Here we propose a multilevel MRAM that writes data at the Curie point and reads data using the angular-dependent magnetoresistance. The former has been proposed by Beech et al. (2000) for a spin-valve based single level MRAM. In our structure, a pinned ferromagnetic layer (CoFe/IrMn) is used as the recording layer in a MTJ device.

    Original languageEnglish (US)
    Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
    EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)0780373650, 9780780373655
    DOIs
    StatePublished - Jan 1 2002
    Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    Publication series

    NameINTERMAG Europe 2002 - IEEE International Magnetics Conference

    Other

    Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
    CountryNetherlands
    CityAmsterdam
    Period04/28/0205/2/02

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Surfaces, Coatings and Films

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