Multilevel magnetoresistive random access memory written at curie point

Yuankai K. Zheng*, Y. H. Wu, Jinjun J. Qiu, Zaibing Guo, G. C. Han, K. B. Li, Z. Q. Lu, H. Xie, P. Luo

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    2 Scopus citations

    Abstract

    A multilevel magnetoresistive random access memory (MRAM) was proposed that writes data at Curie point and reads data using the angular-dependent magnetoresistance. A hard magnetic layer or pinned ferromagnetic layer was used as the recording layer. The free layer was served as the read layer and the magnetization was set to the initial state.

    Original languageEnglish (US)
    JournalDigests of the Intermag Conference
    StatePublished - Dec 1 2002
    Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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