Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work is financed through the Flexlines project within the Interreg V-programme FlandersThe Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.