MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

Kai-Shin Li, Bo-Wei Wu, Lain-Jong Li, Ming-Yang Li, Chia-Chin Kevin Cheng, Cho-Lun Hsu, Chang-Hsien Lin, Yi-Ju Chen, Chun-Chi Chen, Chien-Ting Wu, Min-Cheng Chen, Jia-Min Shieh, Wen-Kuan Yeh, Yu-Lun Chueh, Fu-Liang Yang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

A U-shape MoS2 pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS2 deposition, thin MoS2 is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology.
Original languageEnglish (US)
Title of host publication2016 IEEE Symposium on VLSI Technology
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781509006380
DOIs
StatePublished - Jun 2016

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