Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

K. Kusakabe*, K. Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Morphological evaluation of epitaxial GaN films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The surface frequently showed rough morphology when the GaN was grown at conventional epitaxial conditions. It was found, however, that the surface roughness was improved by using appropriate combinations of growth temperature and low-temperature GaN buffer thickness. Thereby, a peak-to-valley value of the roughness was reduced from 4 μm to 0.8 μm. The rotation of crystallographic orientations was observed in the flattened GaN films.

Original languageEnglish (US)
Pages (from-to)1807-1810
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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