Morphological characteristics of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Kazuhide Kusakabe*, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report the morphological evolution of a-plane GaN thin films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The surface flatness is improved under optimized growth conditions which are different from those of c-plane epitaxy. The peak-to-valley height of surface roughness is reduced from 4 to 0.8 μm when GaN is grown at 1120°C on a 40-nm-thick low-temperature GaN (LT-GaN) buffer layer, as well as at 1150°C on a 20-nm-thick LT-GaN. These samples show their highest electron mobility of 220 cm2/(V s) at an electron concentration of 1.1 × 10 18 cm-3 at room temperature.

Original languageEnglish (US)
Pages (from-to)7931-7933
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number11
DOIs
StatePublished - Nov 9 2005
Externally publishedYes

Keywords

  • Electrical property
  • GaN
  • MOVPE
  • Nonpolar plane
  • Surface morphology

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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