Highly-transparent carrier-selective front contacts open a pathway towards entirely dopant free Si solar cells. Holeselective a-Si:H/MoOx/ITO front contact stacks were already successfully applied in such novel devices. However, for optimum device performance, further improvements are required: We evaluate the use of the high-work-function material WOx as a replacement for MoOx in an attempt to reduce optical absorption losses. In addition, we investigate the use of thin hydrogenated SiOX instead of a-Si:H, and the impact of the residual pressure for MoOx evaporation.
|Original language||English (US)|
|Title of host publication||2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||3|
|State||Published - Jun 2017|