Monolithic intracavity laser-modulator device fabrication using postgrowth processing of 1.55 μm heterostructures

V. Aimez*, J. Beauvais, J. Beerens, S. L. Ng, Boon Ooi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implantation for the realization of photonic integrated circuits on GaInAsP-InP heterostructures. Intracavity electro-absorption modulators monolithically integrated with laser devices were fabricated, using this postgrowth technique. The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB/V at 1.55 μm were obtained on these integrated devices which incorporate both a modulator and a laser.

Original languageEnglish (US)
Pages (from-to)3582-3584
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number22
DOIs
StatePublished - Nov 26 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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