Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

Talal Al Attar*, Thomas H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dB m at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

Original languageEnglish (US)
Pages (from-to)3557-3561
Number of pages5
JournalIEEE Transactions on Microwave Theory and Techniques
Volume53
Issue number11
DOIs
StatePublished - Nov 1 2005

Keywords

  • Complementary metal-oxide-semiconductor technology (CMOS)
  • Impact avalanche transit time (IMPATT) diode
  • Microstrip patch antenna
  • Sonnet
  • Stub
  • Vector network analyzer (vna)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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