Monolithic InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low energy arsenic ion implantation induced intermixing

S. L. Ng*, H. S. Lim, Boon Ooi, Y. L. Lam, Y. Zhou, Y. C. Chan, V. Aimez, J. Beauvais, J. Beerens

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this study, 10-channel monolithic multiple wavelength electro-absorption (EA) modulators were fabricated onto a single chip using a one-step quantum well intermixing technique based on arsenic ion implantation through a graded thickness silicon dioxide mask. The resultant modulators were characterized at room temperature using end-fire-coupling technique.

Original languageEnglish (US)
Pages (from-to)9-10
Number of pages2
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 2000
Event2000 IEEE/LEOS Summer Topical Meeting - Aventura, FL, USA
Duration: Jul 24 2000Jul 28 2000

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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