The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Industrial and Manufacturing Engineering