Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

Y. Wang*, H. S. Djie, Boon Ooi, J. C.M. Hwang, X. M. Fang, Ying Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The first demonstration of a monolithic integrated extended-cavity laser in an InAs/InAlGaAs quantum-dash-in-well structure on an InP substrate is reported. The integration is achieved using nitrogen implantation-induced quantum-dash intermixing. A differential blue shift of 128 nm has been obtained between the active and intermixed passive sections. A propagation loss of 9.2 cm-1 within the intermixed passive waveguide section has been measured by comparing laser threshold currents of all active and integrated extended passive cavity devices.

Original languageEnglish (US)
Pages (from-to)400-402
Number of pages3
JournalLaser Physics
Volume18
Issue number4
DOIs
StatePublished - Apr 1 2008

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering

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