Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

Thomas Frost, Shafat Jahangir, Ethan Stark, Saniya Deshpande, Arnab Shashi Hazari, Chao Zhao, Boon S. Ooi, Pallab K. Bhattacharya

Research output: Contribution to journalArticlepeer-review

112 Scopus citations

Abstract

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)4535-4541
Number of pages7
JournalNano Letters
Volume14
Issue number8
DOIs
StatePublished - Jul 3 2014

ASJC Scopus subject areas

  • Bioengineering
  • Materials Science(all)
  • Chemistry(all)
  • Mechanical Engineering
  • Condensed Matter Physics

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