Monolayer MoS2 for nonvolatile memory applications

Kai Ping Chang, Jer Chyi Wang, Chang Hsiao Chen, Lain-Jong Li, Chao Sung Lai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs.

Original languageEnglish (US)
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages489-491
Number of pages3
ISBN (Electronic)9781467397179
DOIs
StatePublished - Jul 31 2017
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: Oct 25 2016Oct 28 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Other

Other13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
CountryChina
CityHangzhou
Period10/25/1610/28/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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