Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain-Jong Li

Research output: Contribution to journalArticlepeer-review

360 Scopus citations

Abstract

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (
Original languageEnglish (US)
Pages (from-to)8582-8590
Number of pages9
JournalACS Nano
Volume8
Issue number8
DOIs
StatePublished - Aug 7 2014

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