Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

Tien Khee Ng (Inventor), Chao Zhao (Inventor), Davide Priante (Inventor), Boon S. Ooi (Inventor), Mohamed Ebaid Abdrabou Hussein (Inventor)

Research output: Patent

Abstract

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.
Original languageEnglish (US)
Patent numberWO 2018020422 A1
StatePublished - Feb 1 2018

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